Analysis of Power Dissipation in Drift Region of 6h-silicon Carbide Dimosfet
نویسنده
چکیده
Today we need faster devices with high voltage and high switching frequency capability, generally used Silicon-based devices are not able to meet these requirements as they need costly cooling systems, so we need much faster devices like Wide band-gap based semiconductors. These devices have superior physical properties that offer multiple advantages like lower intrinsic carrier concentration , higher electric breakdown field ,higher thermal conductivity and large saturated electron drift velocity which is suitable for faster devices with high voltage and high switching frequency. The paper presents performance difference in terms of current density ,forward voltage ,power dissipation ,power saved between the linearly graded and uniformly doped 6h-sic Dimosfet .The paper also discusses the results of mathematical analysis of power dissipation in the linearly graded and uniformly doped drift regions in SIC. The paper shows that there is significant reduction in power dissipation in the linearly graded profile than the uniformly doped one and this reduction increases with increasing magnitude of current density.
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